S.A. Kukushkin Et al. 50,fifty one described their coordinated substitution of atoms technique for The expansion of epitaxial SiC and in contrast it to more regular vapor section deposition techniques. The authors made their procedure depending on the conversion of the best layers of the Si substrate surface into epitaxial https://www.quora.com/profile/Trevor-Flatcher-2/Corrosion-Resistance-of-Silicon-Carbide-in-Chemical-Equipment-Silicon-carbide-SiC-has-emerged-as-a-crucial-material-i