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Gate Tunable Transport in Graphene/MoS2/(Cr/Au) Vertical Field-Effect Transistors

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Two-dimensional materials based vertical field-effect transistors have been widely studied due to their useful applications in industry. In the present study. we fabricate graphene/MoS2/(Cr/Au) vertical transistor based on the mechanical exfoliation and dry transfer method. Since the bottom electrode was made of monolayer graphene (Gr). https://www.mudrsat.com/product-category/kids-apparel/
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